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Record low contact resistance for InAlN/GaN HEMTs on Si with non-gold metal

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Record low contact resistance for InAlN/GaN HEMTs on Si with non-gold metal
นักวิจัย : Arulkumaran, Subramaniam , Ng, Geok Ing , Ranjan, Kumud , Kumar, Chandra Mohan Manoj , Foo, Siew Chuen , Ang, Kian Siong , Vicknesh, Sahmuganathan , Dolmanan, Surani Bin , Bhat, Thirumaleshwara , Tripathy, Sudhiranjan
คำค้น : DRNTU::Science::Physics
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2558
อ้างอิง : Arulkumaran, S., Ng, G. I., Ranjan, K., Kumar, C. M. M., Foo, S. C., Ang, K. S., & et al. (2015). Record-low contact resistance for InAlN/AlN/GaN high electron mobility transistors on Si with non-gold metal. Japanese journal of applied physics, 54. , http://hdl.handle.net/10220/25337 , http://dx.doi.org/10.7567/JJAP.54.04DF12 , 182935
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Japanese journal of applied physics
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

We have demonstrated 0.17-µm gate-length In0.17Al0.83N/GaN high-electron-mobility transistors (HEMTs) on Si(111) substrates using a non-gold metal stack (Ta/Si/Ti/Al/Ni/Ta) with a record-low ohmic contact resistance (Rc) of 0.36 Ω mm. This contact resistance is comparable to the conventional gold-based (Ti/Al/Ni/Au) ohmic contact resistance (Rc = 0.33 Ω mm). A non-gold ohmic contact exhibited a smooth surface morphology with a root mean square surface roughness of ~2.1 nm (scan area of 5 × 5 µm2). The HEMTs exhibited a maximum drain current density of 1110 mA/mm, a maximum extrinsic transconductance of 353 mS/mm, a unity current gain cutoff frequency of 48 GHz, and a maximum oscillation frequency of 66 GHz. These devices exhibited a very small (<8%) drain current collapse for the quiescent biases (Vgs0 = −5 V, Vds0 = 10 V) with a pulse width/period of 200 ns/1 ms. These results demonstrate the feasibility of using a non-gold metal stack as a low Rc ohmic contact for the realization of high-frequency operating InAlN/AlN/GaN HEMTs on Si substrates without using recess etching and regrowth processes.

บรรณานุกรม :
Arulkumaran, Subramaniam , Ng, Geok Ing , Ranjan, Kumud , Kumar, Chandra Mohan Manoj , Foo, Siew Chuen , Ang, Kian Siong , Vicknesh, Sahmuganathan , Dolmanan, Surani Bin , Bhat, Thirumaleshwara , Tripathy, Sudhiranjan . (2558). Record low contact resistance for InAlN/GaN HEMTs on Si with non-gold metal.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Arulkumaran, Subramaniam , Ng, Geok Ing , Ranjan, Kumud , Kumar, Chandra Mohan Manoj , Foo, Siew Chuen , Ang, Kian Siong , Vicknesh, Sahmuganathan , Dolmanan, Surani Bin , Bhat, Thirumaleshwara , Tripathy, Sudhiranjan . 2558. "Record low contact resistance for InAlN/GaN HEMTs on Si with non-gold metal".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Arulkumaran, Subramaniam , Ng, Geok Ing , Ranjan, Kumud , Kumar, Chandra Mohan Manoj , Foo, Siew Chuen , Ang, Kian Siong , Vicknesh, Sahmuganathan , Dolmanan, Surani Bin , Bhat, Thirumaleshwara , Tripathy, Sudhiranjan . "Record low contact resistance for InAlN/GaN HEMTs on Si with non-gold metal."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2558. Print.
Arulkumaran, Subramaniam , Ng, Geok Ing , Ranjan, Kumud , Kumar, Chandra Mohan Manoj , Foo, Siew Chuen , Ang, Kian Siong , Vicknesh, Sahmuganathan , Dolmanan, Surani Bin , Bhat, Thirumaleshwara , Tripathy, Sudhiranjan . Record low contact resistance for InAlN/GaN HEMTs on Si with non-gold metal. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2558.