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Direct growth of nanocrystalline hexagonal boron nitride films on dielectric substrates

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Direct growth of nanocrystalline hexagonal boron nitride films on dielectric substrates
นักวิจัย : Tay, Roland Yingjie , Tsang, Siu Hon , Loeblein, Manuela , Chow, Wai Leong , Loh, Guan Chee , Toh, Joo Wah , Ang, Soon Loong , Teo, Edwin Hang Tong
คำค้น : DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2558
อ้างอิง : Tay, R. Y., Tsang, S. H., Loeblein, M., Chow, W. L., Loh, G. C., Toh, J. W., et al. (2015). Direct growth of nanocrystalline hexagonal boron nitride films on dielectric substrates. Applied physics letters, 106(10), 101901-. , http://hdl.handle.net/10220/25319 , http://dx.doi.org/10.1063/1.4914474
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Applied physics letters
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

Atomically thin hexagonal-boron nitride (h-BN) films are primarily synthesized through chemical vapor deposition (CVD) on various catalytic transition metal substrates. In this work, a single-step metal-catalyst-free approach to obtain few- to multi-layer nanocrystalline h-BN (NCBN) directly on amorphous SiO2/Si and quartz substrates is demonstrated. The as-grown thin films are continuous and smooth with no observable pinholes or wrinkles across the entire deposited substrate as inspected using optical and atomic force microscopy. The starting layers of NCBN orient itself parallel to the substrate, initiating the growth of the textured thin film. Formation of NCBN is due to the random and uncontrolled nucleation of h-BN on the dielectric substrate surface with no epitaxial relation, unlike on metal surfaces. The crystallite size is ∼25 nm as determined by Raman spectroscopy. Transmission electron microscopy shows that the NCBN formed sheets of multi-stacked layers with controllable thickness from ∼2 to 25 nm. The absence of transfer process in this technique avoids any additional degradation, such as wrinkles, tears or folding and residues on the film which are detrimental to device performance. This work provides a wider perspective of CVD-grown h-BN and presents a viable route towards large-scale manufacturing of h-BN substrates and for coating applications.

บรรณานุกรม :
Tay, Roland Yingjie , Tsang, Siu Hon , Loeblein, Manuela , Chow, Wai Leong , Loh, Guan Chee , Toh, Joo Wah , Ang, Soon Loong , Teo, Edwin Hang Tong . (2558). Direct growth of nanocrystalline hexagonal boron nitride films on dielectric substrates.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Tay, Roland Yingjie , Tsang, Siu Hon , Loeblein, Manuela , Chow, Wai Leong , Loh, Guan Chee , Toh, Joo Wah , Ang, Soon Loong , Teo, Edwin Hang Tong . 2558. "Direct growth of nanocrystalline hexagonal boron nitride films on dielectric substrates".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Tay, Roland Yingjie , Tsang, Siu Hon , Loeblein, Manuela , Chow, Wai Leong , Loh, Guan Chee , Toh, Joo Wah , Ang, Soon Loong , Teo, Edwin Hang Tong . "Direct growth of nanocrystalline hexagonal boron nitride films on dielectric substrates."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2558. Print.
Tay, Roland Yingjie , Tsang, Siu Hon , Loeblein, Manuela , Chow, Wai Leong , Loh, Guan Chee , Toh, Joo Wah , Ang, Soon Loong , Teo, Edwin Hang Tong . Direct growth of nanocrystalline hexagonal boron nitride films on dielectric substrates. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2558.