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Influence of composition diffusion on the band structures of InGaNAs/GaAs quantum wells investigated by the band-anticrossing model

หน่วยงาน Nanyang Technological University, Singapore

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ชื่อเรื่อง : Influence of composition diffusion on the band structures of InGaNAs/GaAs quantum wells investigated by the band-anticrossing model
นักวิจัย : Qiu, Y. N. , Rorison, J. M. , Sun, Handong , Calvez, Stephane , Dawson, M. D. , Bryce, A. C.
คำค้น : DRNTU::Science::Physics::Optics and light.
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2548
อ้างอิง : Qiu, Y. N., Rorison, J. M., Sun, H. D., Calvez, S, Dawson, M. D., & Bryce A. C. (2005). Influence of composition diffusion on the band structures of InGaNAs/GaAs quantum wells investigated by the band-anticrossing model. Applied Physics Letters, 87(23), 1-3. , 0003-6951 , http://hdl.handle.net/10220/6058 , http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:EBSCO_APH&id=doi:&genre=&isbn=&issn=00036951&date=2005&volume=87&issue=23&spage=231112&epage=&aulast=Qiu&aufirst=%20Y%20%20N&auinit=&title=Applied%20Physics%20Letters&atitle=Influence%20of%20composition%20diffusion%20on%20the%20band%20structures%20of%20InGaNAs%2FGaAs%20quantum%20wells%20investigated%20by%20the%20band%2Danticrossing%20model%2E&sici. , http://dx.doi.org/10.1063/1.2138350
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Applied physics letters
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

We investigate the influence of quantum-well intermixing (QWI) on the electronic band structure of GaInNAs/GaAs multiquantum wells. The band structures and optical transitions have been calculated based on the band-anticrossing (BAC) model and Fick's interdiffusion law for both intermixed and nonintermixed samples, respectively. The calculated results are consistent with the true optical transitions observed by photoluminescence excitation spectroscopy and secondary ion mass spectroscopy. Our investigation indicates that BAC model is valid for interdiffused quantum wells and verifies that the QWI process in GaInNAs/GaAs multiquantum wells is induced mainly by the interdiffusion of In-Ga between the quantum wells and barriers.

บรรณานุกรม :
Qiu, Y. N. , Rorison, J. M. , Sun, Handong , Calvez, Stephane , Dawson, M. D. , Bryce, A. C. . (2548). Influence of composition diffusion on the band structures of InGaNAs/GaAs quantum wells investigated by the band-anticrossing model.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Qiu, Y. N. , Rorison, J. M. , Sun, Handong , Calvez, Stephane , Dawson, M. D. , Bryce, A. C. . 2548. "Influence of composition diffusion on the band structures of InGaNAs/GaAs quantum wells investigated by the band-anticrossing model".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Qiu, Y. N. , Rorison, J. M. , Sun, Handong , Calvez, Stephane , Dawson, M. D. , Bryce, A. C. . "Influence of composition diffusion on the band structures of InGaNAs/GaAs quantum wells investigated by the band-anticrossing model."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2548. Print.
Qiu, Y. N. , Rorison, J. M. , Sun, Handong , Calvez, Stephane , Dawson, M. D. , Bryce, A. C. . Influence of composition diffusion on the band structures of InGaNAs/GaAs quantum wells investigated by the band-anticrossing model. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2548.